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| SMD Type HEXFET Power MOSFET KRF2805S Features Advanced Process Technology + .1 1 .2 7 -00.1 Transistors IC TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Allowed up to Tjmax + .2 5 .2 8 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 Fast Switching + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt* Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Junction-to-Case Junction-to-Ambient (PCB mount) * ISD 104A, di/dt 240A/ s, VDD V(BR)DSS,TJ R JC R JA 175 VGS EAS IAR EAR dv/dt TJ,TSTG 2 -55 to + 175 300 0.75 40 /W Symbol ID ID IDM PD Rating 135 96 700 200 1.3 20 380 Fig.1.2 W W/ V mJ A mJ V/ns A Unit Fig1. Unclamped Inductive Test Circuit Fig 2. Unclamped Inductive Waveforms 5 .6 0 175 Operating Temperature 11gate Gate 22drain Drain 33source Source www.kexin.com.cn 1 SMD Type KRF2805S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intermal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time * Pulse width 400 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. IS ISM VSD trr Qrr ton TJ = 25 , IS = 104A, VGS = 0V TJ = 25 , IF = 104A di/dt = 100A/ s* VGS = 0V VDS = 25V f = 1.0MHz VGS = 0V, VDS = 1.0V, f = 1.0MHz VGS = 0V, VDS = 44V, f = 1.0MHz VGS = 0V, VDS = 0V to 44V Symbol V(BR)DSS V(BR)DSS/ Transistors IC Testconditons VGS = 0V, ID = 250 A TJ Reference to 25 , ID = 1mA VGS = 10V, ID = 104A * VDS = VGS, ID = 250 A VDS = 25V, ID = 104A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150 Min 55 Typ Max Unit V 0.06 3.9 2.0 91 20 250 200 -200 150 38 52 14 120 68 110 4.5 230 57 78 4.7 4.0 V/ m V S A RDS(on) VGS(th) gfs IDSS IGSS VGS = 20V VGS = -20V ID = 104A VDS = 44V VGS = 10V * VDD = 28V ID = 104A RG = 2.5 VGS = 10V * nA nC ns nH 7.5 5110 1190 210 6470 860 1600 175 A Body Diode) 700 1.3 80 290 120 430 V ns C pF Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.kexin.com.cn |
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